Fast modelling of field evaporation in atom probe tomography using level set methods

Ultrafast Laser Assisted Field Evaporation and Atom Probe Tomography Applications

Considering the recent developments of the pulsed laser in the femtosecond domain, the possibility of conceiving a new laser assisted Tomographic Atom Probe has been nvisaged. The instrument is able to map out the 3D distributions of the atomic positions in a The interest of the terial sciences has already been demonstrated many times [3,4]. However, since HV mples have to be electrically good ...

Effect of Field-evaporation Rate on Quantitative Atom-probe Analysis

The effects of field-evaporation rate on the quantitative chemical analysis of materials by atom-probe field-ion microscopy are considered. Examples of erroneously high measured values of the Ti concentration in Mo-1.0 at.% Ti and Mo-1.0 at.% Ti-0.08 at.% Zr (TZM) alloys are presented and the cause is shown to have been due to a high field-evaporation rate. The basic arguments used to explain t...

Preferential Field Evaporation during Atom Probe Analysis of Zircaloy-4

Ultrafast Laser Assisted Field Evaporation and Atom Probe Tomograp

Considering the recent developments of the pulsed laser in the femtosecond domain, the possibility of conceiving a new laser assisted Tomographic Atom Probe has been nvisaged. The instrument is able to map out the 3D distributions of the atomic positions in a The interest of the terial sciences has already been demonstrated many times [3,4]. However, since HV mples have to be electrically good ...

Atom probe tomography in nanoelectronics

The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...